Silicon Nitride (Si3N4) 

Silicon Nitride  Sputtering Target (Si3N4 Target)

Purity --- >99%, >99.9%

Shape --- Discs, Plate, Step (Dia ≤300mm,,  Thickness ≥2mm)

                 Rectangle, Sheet,  Step (Length ≤300mm, Width ≤300mm, Thickness ≥2mm) 

Silicon Nitride Nanometer Powder (Amorphous Si3N4) 

Purity---99.0%     Oxygen content --- <0.62wt%  Dissociative Si (%)---< 0.3%

Color --- white      Crystal Phase --- Amorphous 

Average particle size (D50) --- <20nm

Specific surface area  --- >115m²/g

Loose loading density ---  0.05g/cm³  

Manufacture method --- Plasma arc vapor 

Silicon Nitride Nanometer Powder ( Alpha Si3N4 ) 

Purity---99.1%     Oxygen content --- <0.9wt%  

Color --- shallow brown      Crystal Phase --- Hexagonal 

Average particle size (D50) --- <100-800nm

Specific surface area  --- >45m²/g

Loose loading density ---  0.44g/cm³  

Manufacture method --- Plasma arc vapor 

Application --- This product has high purity, small and uniform particle diameters, large specific surface area, high surface activity, and low loose loading density.  When Nano-Si3N4 is made to be structure devices, the devices will have low ceramic formation temperature of ceramic, good size stability, high mechanical strength, high chemical anticorrosion, especially, the devices possess high strength, at high temperature and the self greasing effect, when this powder is used as the dispersion phase in composites, these dispersion phases increase substantially complex properties of composites.