| Basic Information | |
| Name: Nitrogen Symbol: N Atomic Number: 7 Atomic Mass: 14.00674 amu Melting Point: -209.9 ＜C (63.250008 ＜K, -345.81998 ＜F) Boiling Point: -195.8 ＜C (77.35 ＜K, -320.44 ＜F) |
Number
of Protons/Electrons: 7 Number of Neutrons: 7 Classification: Non-metal Crystal Structure: Hexagonal Density @ 293 K: 1.2506 g/cm3 Color: colorless |
Metals (Top)
| Name | Sign | Purity | Shape |
Alloys (Top)
| Name | Sign | Purity | Shape |
| Name | Sign | Purity | Shape |
Aluminum Nitride |
AlN |
97%-98% |
Sputtering Target, Evaporation Material, Substrate,Nanometer Powder, Plate, Sheet, Disk, Powders(40-300mesh) |
Boron Nitride |
BN |
99.5% |
Sputtering Target, Evaporation Material, Crucible, Plate, Sheet, Disk, Powders,Boat |
Chromium Nitride |
CrN |
98%-99% |
Sputtering Target, Evaporation Material, Substrate, Plate, Sheet, Disk, Powders(40-300mesh) |
Chromium Carbonitride |
CrCN |
98%-99.5% |
Sputtering Target, Evaporation Material, Substrate, Plate, Sheet, Disk, Powders(40-300mesh) |
Hafnium Nitride |
HfN |
98%-99% |
Sputtering Target, Evaporation Material, Plate, Sheet, Disk, Powders(40-300mesh) |
Silicon Nitride |
Si3N4 |
98%-99% |
Sputtering Target, Evaporation Material, Substrate,Nanometer Powder, Plate, Sheet, Disk, Powders(40-300mesh) |
Niobium Nitride |
NbN |
98%-99% |
Sputtering Target, Evaporation Material, Plate, Sheet, Disk, Powders(40-300mesh) |
Titanium Carbonitride |
TiCN |
98%-99% |
Sputtering Target, Evaporation Material, Substrate, Plate, Sheet, Disk, Powders(40-300mesh) |
Tantalum Nitride |
TaN |
99.99% |
Sputtering Target, Evaporation Material, Substrate, Plate, Sheet, Disk, Powders |
Titanium Nitride |
TiN |
98%-99% |
Sputtering Target, Evaporation Material, Substrate, Nanometer Powder, Plate, Sheet, Disk, Powders(40-300mesh) |
Vandium Nitride |
VN |
98%-99% |
Sputtering Target, Evaporation Material, Plate, Sheet, Disk, Powders(40-300mesh) |
Zirconium Nitride |
ZrN |
97%-99% |
Sputtering Target, Evaporation Material, Substrate, Plate, Sheet, Disk, Powders(100-300mesh) |
