| Basic Information | |
| Name: Carbon Symbol: C Atomic Number: 6 Atomic Mass: 12.0107 amu Melting Point: 3500.0 ＜C (3773.15 ＜K, 6332.0 ＜F) Boiling Point: 4827.0 ＜C (5100.15 ＜K, 8720.6 ＜F) |
Number
of Protons/Electrons: 6 Number of Neutrons: 6 Classification: Non-metal Crystal Structure: Hexagonal Density @ 293 K: 2.62 g/cm3 Color: May be black |
Metals (Top)
| Name | Sign | Purity | Shape |
| Carbon | C | 99.99% | Rod, Sheet, Plate, Crucible, Pellet, Sputtering Target |
| Pyrolytic Graphite (PG) | PG | 99.998% | Rod, Sheet, Plate, Crucible, Pellet, Sputtering Target |
Alloys (Top)
| Name | Sign | Purity | Shape |
Aluminum Titanium Carbon Alloy |
AlTiC Alloy |
5% Ti - 0.2% C | Waffles, Rods |
Aluminum Titanium Carbon Alloy |
AlTiC Alloy |
3% Ti - 0.2% C | Waffles, Rods |
Aluminum Titanium Carbon Alloy |
AlTiC Alloy |
3% Ti - 0.15% C |
Waffles, Rods |
| Name | Sign | Purity | Shape |
| Boron carbide | B4C | 99.5 | Sputtering Target, Evaporation material, Powders(40-300mesh) |
Chromium Carbide |
Cr3C2 |
99.5% |
Sputtering Target, Evaporation material, Powders(40-300mesh) |
Chromium Carbonitride |
CrCN |
99.5% |
Sputtering Target, Evaporation material, powders(40-300mesh) |
| Hafnium carbide | HfC | 99.5% | Sputtering Target, Evaporation material, powders(40-300mesh) |
| Molybdenum carbide | Mo2C | 99.5 | Sputtering Target, Evaporation material, powders(40-300mesh) |
Niobium Carbide |
NbC |
99.5% |
Sputtering Target, Evaporation material, powders(40-300mesh) |
| Silicon carbide | SiC | 99.5 | Sputtering Target, Evaporation material, powders(200-300mesh) |
Tantalum Carbide |
TaC |
99.5% |
Sputtering Target, Evaporation material, powders(200-300mesh) |
Titanium Carbide |
TiC |
99.5% |
Sputtering Target, Evaporation material, powders(40-300mesh) |
Titanium Carbonitride |
TiCN |
99.5% |
Sputtering Target, Evaporation material, powders(40-300mesh) |
| Tungsten carbide | WC | 99.5% | Sputtering Target, Evaporation material, powders(200-300mesh) |
| Tungsten carbide | W2C | 99.5% | Sputtering Target, Evaporation material, powders(200-300mesh) |
| Tungsten carbide -cobalt | WC - 6 wt. % Co | 99.5% | Sputtering Target, Evaporation material, powders(200-300mesh) |
| Tungsten carbide -cobalt | W2C - 12 wt. % Co | 99.5% | Sputtering Target, Evaporation material, powders(200-300mesh) |
| Vanadium carbide | VC | 99.5 | Sputtering Target, Evaporation material, powders(200-300mesh) |
Zirconium Carbide |
ZrC |
99.5% |
Sputtering Target, Evaporation material, powders(100-300mesh) |
