Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.

Indium phosphide is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.It also be used in optoelectronics devices like laser diodes just for a direct bandgap. It can be useed in optical-electronic field and microwave field,and recentlys,it widly used solar cell technique. Also it can be used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.

Basic Information

Color: Black cubic crystals Molar mass: 145.792 g/mol Odor: no odor Melting point/Melting range:1062¡ãC (1335.15 K) Boiling point/Boiling range:Not determined Flash point:Not applicable Ignition temperature:Not applicable

Decomposition temperature: Not determined Danger of explosion: . Explosion limits: Not applicable Vapor pressure: Density: 4.81 g/cm3, solid Solubility in / Miscibility with Water: Insoluble CAS NUMBER: [22398-80-7]

Indium Phosphide (InP) sputtering target

Diameter---2", 3", 4" Purity --- 99.999%

Shape --- Rod, Disk, Sheet
Other special requirements can be satisfied.

Indium Phosphide (InP) evaporation material

Purity --- 99.999% Dimension --- 2-10mm, custom-made

Shape --- ingot, lumps(2-10mm)
Other special requirements can be satisfied.

Indium Phosphide (InP) Wafer (Single Crystal /mul-crystal)

Diameter --- 2", 3" Purity --- 99.999%

Surface --- One side polished, two side polished, orientation(100)(111) thickness:350+/-25µm or 625µm.

Application --- substrate for epitaxial indium gallium arsenide based opto-electronic devices.

Below show some common product, other special requirements can be satisfied. All wafer can be used as you got it, orientation(100)(111).

Main Parameter of Indium phosphide single crystal wafer: