Indium Gallium Zinc Oxide Sputtering Targets - IGZO Targets

Purity & Component:

99.99%

Density: 5.4g/cm3

Color --- yellow or gray

Manufacturing Process:

Material synthesis ---> Milling ---> HP(Vacuum) ---> Machining ---> Checking ---> Packing

Speciafication (Max):

Plane circular target: Dia ≤480mm, Thickness ≥1mm

Plane Rectangle target: Length ≤420mm, Width ≤270mm, Thickness ≥1mm)

Totary Target: Diameter≤ 200mm,  Thickness >2mm)

Application:

used in Display field ...

Our Advantage about Indium Gallium Zinc Oxide Sputtering Targets - IGZO Targets

China rare metal material co.,limited (CRM) is an experter in manufacture IGZO sputtering targets as evaporation material . All IGZO sputtering targets are manufacture by programs with  with the highest possible density and smallest possible average grain size.. 

CRM material co.,limited is specialized in making virous sputtering targets. We have many raw material compounds line, such as semiconductor line, chemical compounds line, metallurgy line, powder milling line, etc. Moreover, we introduced many advanced technology and equipments from related companies at home and aborad. We also have an experienced research team who have developed many new and special pellets, and also successfully made many trial orders and received many customers satisfaction and long-term friendship. 

All IGZO sputtering targets are analyzed using best detection means including chemical analysis, Crystal phase microscope, x ray diffraction(XRD), X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP).

Reference Information about Indium Gallium Zinc Oxide Sputtering Targets - IGZO Targets

Indium gallium zinc oxide, IGZO is a semiconducting material, jointly developed by Sharp Corporation and Semiconductor Energy Laboratories, which can be used as the channel for a transparent thin-film transistor. It replaces amorphous silicon for the active layer of an LCD screen, and, with a forty times higher electron mobility than amorphous silicon, it allows either smaller pixels (for screen resolutions higher than HDTV) or much higher reaction speed for a screen.

Its advantage over zinc oxide is that it can be deposited as a uniform amorphous phase while retaining the high carrier mobility common to oxide semiconductors.The transistors are slightly photo-sensitive, but the effect becomes significant only in the deep violet to ultra-violet (photon energy above 3 eV), offering the possibility of a fully transparent transistor.

Sharp announced in mid-April 2012 that they were producing bulk volumes of 32-inch 3840×2160, 10-inch 2560×1600 and 7-inch 1280x800 IGZO panels.

On October 26 2012, AU Optronics announced a 65-inch 4k UHDTV IGZO display.

Relation Products of Indium Gallium Zinc Oxide Sputtering Targets - IGZO Targets

Niobium metal, Niobium sputtering target

Titanium sputtering target, Titaniun metal

TiOx sputtering target , Titanium Dioxide sputtering target

AZO sputtering target

IGZO sputtering target

ITO sputtering targets

NbOx target /Nb2O5 sputtering target / Niobium Pentoxide target