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Indium Arsenide (InAs)

Indium arsenide granule Indium arsenide is manufactury by zone melting both high purity indium and aresenide. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1-3.8 μm.

Base information:

Color: dark grey silvery
Odor: not known
Melting point/Melting range: 527 °C
Boiling point/Boiling range: Not determined
Sublimation temperature / start: Not determined
Flash point: Not applicable
Ignition temperature: Not applicable

Decomposition temperature: 500°C
Danger of explosion: .
Explosion limits:
Vapor pressure:
Density: 5.8g/cm3 at 25 °C
CAS NUMBER: [1312-41-0]

Indium Arsenide (InAs) Sputtering target

Shape---Disk(2 inch, 3 inch),Sheet

Indium Arsenide (InAs) Granular/Irregular Piece

Shape---Irregular Piece,granular (2-10mm)

Indium Arsenide (InAs) Wafer

Size --- Dia50mm/76mm, thickness 450um
Surface --- One side polished, two side polished, orientation(100) thickness:450+/-25μm.
Application --- Infrared detectors, infrared LEDs and lasers and transistors.

Main Parameter of Indium phosphide single crystal wafer: (any other speciafication, need by custom-made)

Varieties	Diameter(mm)	Type	Consistency(cm-3)	Mobility(cm2/V.s)	Resistivity(Ω.cm)	Dislocation density(cm-2)
InAs	50/76	N	<3X10¹⁶	>20000	-	<3X10⁴
Sn-InAs	50/76	N	(5-20)X10¹⁷	>2000	-	<1X10⁴
S-InAs	50/76	N	(3-80)X10¹⁷	>2000	-	<1X10⁴
Zn-InAs	50/76	P	(3-80)X10¹⁷	60-300	-	<1X10⁴
Mn-InAs	50/76	P	(5-60)X10¹⁷	60-300	-	<1X10⁴