Catalog specimen reference · actual appearance and dimensions depend on your specification
Zinc (Zn) sputtering target
Formula: Zn · SKU: CRM-TGT-ZN · CAS: 7440-66-6
China Rare Metal Material Co., Ltd. (CRM) manufactures high-density High Purity Zinc (Zn) Sputtering Target (CAS: 7440-66-6) engineered for magnetron physical vapor deposition (DC, RF, and pulsed PVD). Consolidated via vacuum induction melting (VIM), vacuum hot pressing (VHP), or hot isostatic pressing (HIP), our targets feature homogeneous fine-grained microstructures, high relative density (>99%), and minimal gaseous interstitials (O, N, C, H)
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to prevent arcing and particle generation during sputtering. Available in standard purities of 99.99% and supplied as Sputtering Targets (Custom geometries & dimensions on request). Complete oxygen-free copper (OFHC) or molybdenum backing plate bonding (indium or elastomer) with >98% ultrasonic C-Scan verification and batch GDMS/ICP-OES COA is provided.
Confirming your specification
Share the impurity limits, dimensional tolerances, backing plate configuration, and analytical reports required for your process. We will confirm the available specification, lead time, and lot documentation with your quotation.
Selected options are carried over to your inquiry list. Choose your quantity and unit above, then specify target dimensions, tolerances, or backing plate preferences on the inquiry page. Mechanical drawings can be sent by email.
Documentation & engineering support
Certificate of Analysis (COA)Request →Safety Data Sheet (SDS)Request →Custom specificationsRequest → Open stoichiometry & target mass calculators Calculators →Material specifications
| Chemical formula | Zn |
|---|---|
| Product code | CRM-TGT-ZN · CAS 7440-66-6 |
| Product type | Sputtering targets |
| Material family | Elemental materials |
| Elements | Zn ↗ |
| Purity grades | 99.99% |
|---|---|
| Listed forms | Sputtering targets (custom geometries & dimensions on request) |
| Reference starter spec | Quote on Request (RFQ) · Standard Ø50.8 × 3.175 mm planar target reference lot |
| Application guidance | Semiconductor wafer metallization, barrier layers & gate dielectrics; Flat-panel displays (AMOLED, TFT-LCD, IGZO) & transparent conductive electrodes (TCO); Optical interference filters, low-E architectural glass & laser coatings; Thin-film solar photovoltaics (CIGS, CdTe, Perovskite, HJT) & solid-state batteries; Magnetic data storage, spintronics & wear-resistant decorative hard coatings |
For multi-element alloys and compounds, please specify whether composition ratios are in atomic percent (at%) or weight percent (wt%).
