VC VC Formula shown · product photo not available
Sputtering targets · CRM-TGT-VC

Vanadium carbide (VC) sputtering target

Formula: VC · SKU: CRM-TGT-VC · CAS: 12070-10-9

China Rare Metal Material Co., Ltd. (CRM) manufactures high-density Vanadium Carbide (VC) Sputtering Target (CAS: 12070-10-9) engineered for magnetron physical vapor deposition (DC, RF, and pulsed PVD). Consolidated via vacuum induction melting (VIM), vacuum hot pressing (VHP), or hot isostatic pressing (HIP), our targets feature homogeneous fine-grained microstructures, high relative density (>99%), and minimal gaseous interstitials (O, N, C,

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H) to prevent arcing and particle generation during sputtering. Available in standard purities of 4N (99.99%) and supplied as Circular Planar Target (Ø2"–12"); Rectangular Planar Targets; Vacuum Brazing / Indium Bonding to OFHC Backing Plate. Complete oxygen-free copper (OFHC) or molybdenum backing plate bonding (indium or elastomer) with >98% ultrasonic C-Scan verification and batch GDMS/ICP-OES COA is provided.

Confirming your specification

Share the impurity limits, dimensional tolerances, backing plate configuration, and analytical reports required for your process. We will confirm the available specification, lead time, and lot documentation with your quotation.

Purity grade
Form & dimensions

Selected options are carried over to your inquiry list. Choose your quantity and unit above, then specify target dimensions, tolerances, or backing plate preferences on the inquiry page. Mechanical drawings can be sent by email.

Documentation & engineering support

Certificate of Analysis (COA)Request →Safety Data Sheet (SDS)Request →Custom specificationsRequest → Open stoichiometry & target mass calculators Calculators →

Material specifications

Chemical formulaVC
Product codeCRM-TGT-VC · CAS 12070-10-9
Product typeSputtering targets
Material familyOxides & technical ceramics
ElementsV ↗ C ↗
Purity grades4N (99.99%)
Listed formsCircular planar target (Ø2"–12") · Rectangular planar targets · Vacuum brazing / indium bonding to OFHC backing plate
Reference starter specQuote on Request (RFQ) · Standard Ø50.8 × 3.175 mm planar target reference lot
Application guidanceSemiconductor wafer metallization, barrier layers & gate dielectrics; Flat-panel displays (AMOLED, TFT-LCD, IGZO) & transparent conductive electrodes (TCO); Optical interference filters, low-E architectural glass & laser coatings; Thin-film solar photovoltaics (CIGS, CdTe, Perovskite, HJT) & solid-state batteries; Magnetic data storage, spintronics & wear-resistant decorative hard coatings

For multi-element alloys and compounds, please specify whether composition ratios are in atomic percent (at%) or weight percent (wt%).