Zinc Telluride (ZnTe) Powder |
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Zinc Telluride (ZnTe) Powder Purity: 99.99%, 99.999% Manufacturing Process: Raw material preparation ---> Material synthesis ---> Milling ---> Screening ---> Checking ---> Packing Specifications: mesh<200mesh, mesh<100mesh Applications: optoelectronics, nonlinear optics |
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Our Advantage about Zinc Telluride Powder China rare metal material co.,limited (CRM) is an experter in manufacture Zinc Telluride Powder as powder material . All Zinc Telluride Powder are manufacture by programs with with the highest possible density and smallest possible average grain size.. CRM material co.,limited is specialized in making virous Powder. We have many raw material compounds line, such as semiconductor line, chemical compounds line, metallurgy line, powder milling line, etc. Moreover, we introduced many advanced technology and equipments from related companies at home and aborad. We also have an experienced research team who have developed many new and special pellets, and also successfully made many trial orders and received many customers satisfaction and long-term friendship. All Zinc Telluride powder are analyzed using best detection means including chemical analysis, Crystal phase microscope, x ray diffraction(XRD), X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). |
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Refernece Informationg about Zinc Telluride (ZnTe) Powder Zinc Telluride is a binary chemical compound with the formula ZnTe. This solid is a semiconductor material with a direct band gap of 2.26 eV. It is usually a p-type semiconductor. Its crystal structure is cubic, like that for sphalerite and diamond. ZnTe has the appearance of grey or brownish-red powder, or ruby-red crystals when refined by sublimation. Zinc telluride typically had a cubic (sphalerite, or "zincblende") crystal structure, but can be also prepared as rocksalt crystals or in hexagonal crystals (wurtzite structure). Irradiated by a strong optical beam burns in presence of oxygen. Its lattice constant is 0.6101 nm, allowing it to be grown with or on aluminium antimonide, gallium antimonide, indium arsenide, and lead selenide. With some lattice mismatch, it can also be grown on other substrates such as GaAs, and it can be grown in thin-film polycrystalline (or nanocrystalline) form on substrates such as glass, for example, in the manufacture of thin-film solar cells. In the wurtzite (hexagonal) crystal structure, it has lattice parameters a = 0.427 and c = 0.699 nm.
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