Indium Doped Zinc Oxide (IZO) Sputtering Targets |
Indium Doped Zinc Oxide (IZO) Sputtering Targets
Purity & Component: 99.99% , In2O3+SnO2 90:10 95:5 Density---7.15g/cm3 Resistivity: 2.4×10–4 ohm.m Manufacturing Process: Material synthesis ---> Milling ---> HP(Vacuum) ---> Machining ---> Checking ---> Packing Speciafication (Max): Plane circular target: Dia ≤480mm, Thickness ≥1mm Plane Rectangle target: Length ≤420mm, Width ≤270mm, Thickness ≥1mm) Totary Target: Diameter≤ 200mm, Thickness >2mm) Application: Transparent conductive film, OLED application and so on Application---thermal electrode of the waveguide devices |
Our Advantage about Indium Doped Zinc Oxide (IZO) Sputtering Targets China rare metal material co.,limited (CRM) is an experter in manufacture Indium doped Zinc oxide sputtering targets as evaporation material . All Indium doped Zinc oxide sputtering targets are manufacture by programs with with the highest possible density and smallest possible average grain size.. CRM material co.,limited is specialized in making virous sputtering targets. We have many raw material compounds line, such as semiconductor line, chemical compounds line, metallurgy line, powder milling line, etc. Moreover, we introduced many advanced technology and equipments from related companies at home and aborad. We also have an experienced research team who have developed many new and special pellets, and also successfully made many trial orders and received many customers satisfaction and long-term friendship. All Indium doped Zinc oxide sputtering targets are analyzed using best detection means including chemical analysis, Crystal phase microscope, x ray diffraction(XRD), X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). |
Refernence Information about Indium Doped Zinc Oxide (IZO) Sputtering Targets CRM material co.,limited supply IZO material for many years. Indium oxide doped with tin oxide, IZO, is used to make transparent conductive coatings which will be used for plane indicator such as LCD, ELD, and ECD. The zinc doped indium oxide (IZO) films deposited with various sputter parameters such as, film thickness ranging from 200 to 500 nm, O2/Ar ratio ranging from 0% to 12%, and sputter power ranging from 100 to250W was studied in this work. For a 200 nm thick IZO film grown at room temperature in pure argon atmosphere, the resistivity was 2.4×10–4 ohm cm and the average transmittance in the visible region was 80%. The root mean square roughness of IZO film was around 0.4 nm regardless of the film thickness due to the IZO films exhibiting an amorphous structure. With increasing film thickness, the IZO films showed an increase in the resistivity and energy band gap. X-ray photoelectron spectroscopy analysis suggests that the IZO films with reduction of O2/Ar ratio possess two splitting O 1s binding energy levels, suggesting the IZO films were oxygen deficient and resulted in a lower resistivity. |
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