Gallium Antimonide ( GaSb) 

Gallium antimonide is a semiconducting compound of gallium and antimony of the III-V family. It has a lattice constant of about 0.61 nm with a zinc blende crystal structure. The band gap energy is 0.726 eV.

GaSb can be used for Infrared detectors, infrared LEDs and lasers and transistors.
Basic Information

Gallium Antimonide (GaSb) Sputtering Target

Purity--- 99.999% Diameter---2"、3"、4"、6"

Shape---Discs: Dia(≤360mm),Thickness(≥0.5mm)
Rectangle: Length(≤250mm),Width(≤250mm),Thickness(≥1mm)
Rods: Dia(≤250mm),Length(≤250mm)
Pellets: Dia(≤250mm),Thickness(≥1mm)

Application --- Infrared detectors, infrared LEDs and lasers and transistors.

Gallium Antimonide (GaSb) lump

Purity--- 99.99%,99.999%
Size --- irregular lump

Application --- Infrared detectors, infrared LEDs and lasers and transistors.

Gallium Antimonide (GaSb) Powder

Purity--- 99.99%,99.999%
Size ---

Application --- Infrared detectors, infrared LEDs and lasers and transistors.

Gallium Antimonide Wafer / GaSb substrate

Purity--- 99.999%
Size --- Dia50mm/76mm, thickness 450um
Surface --- One side polished, two side polished, orientation(100) thickness:450+/-25μm.
Application --- Infrared detectors, infrared LEDs and lasers and transistors.

Main Parameter of Indium phosphide single crystal wafer: (any other speciafication, need by custom-made)